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Synonyms | temah;temahf;tetrakis(ethylmethylamido)hafnium(iv);Tetrakis(ethylmethylamino)hafnium; |
Appearance | Colorless to pale yellow liquid |
Molecular Weight | 410.9 g/mol |
Melting Point | <-50 ℃ |
Boiling Point | 79 ℃0.1 mm Hg(lit.) |
Vapor Pressure | 0.1 Torr @ 83℃ |
Storage Conditions | Store in an inert atmosphere |
Solubility | Soluble in organic solvents such as hexane, toluene, etc. |
Stability | Highly sensitive to air and moisture |
Purity | 99%，Hf-99.9999% |
Analytical Methods | ICP-MS / ICP-OES / relevant assay method |
Package Information | 100g, 500g, 1kg, or customized |
TEMAHf is a liquid hafnium ALD precursor with volatility suitable for vapor-phase delivery. Compared to solid hafnium sources, its liquid form simplifies precursor handling and enables stable, reproducible dose control in ALD/CVD systems.
Its ethylmethylamido ligands readily react with oxidants such as H₂O and O₃, making TEMAHf particularly well-suited for HfO₂ atomic layer deposition processes. This precursor is widely used in applications requiring precise thickness control and conformal high-k dielectric thin films.
TEMAHf is primarily used as a hafnium source for the atomic layer deposition (ALD) of HfO₂, typically employing H₂O or O₃ as a co-reactant. HfO₂ films deposited using TEMAHf can be applied in:
High-k gate dielectric layers
DRAM capacitor dielectrics
MIM dielectric structures
Other hafnium (Hf)-based dielectric stacks
TEMAHf can also be combined with zirconium precursors such as TEMAZ to deposit HfₓZr₁₋ₓO₂ (HZO). By alternating ALD cycles for Hf and Zr, the film composition can be precisely controlled to meet the requirements of ferroelectric HZO device applications, such as FeRAM and FeFET.
TEMAHf is sensitive to air and moisture; therefore, filling is performed under controlled conditions to minimize exposure during storage and transport.
Container specifications, valves, and connection configurations can be tailored to match the customer's delivery system.
TEMAHf is a liquid precursor characterized by suitable volatility and surface reactivity. It can be delivered in the gas phase and react with appropriate co-reactants during successive ALD cycles, enabling the controlled and conformal deposition of hafnium (Hf)-containing thin films.
Its primary semiconductor application is the deposition of hafnium (Hf)-based thin films, particularly HfO₂ high-k dielectric films. TEMAHf can also be used in conjunction with zirconium precursors, such as TEMAZ, to deposit Hf-Zr-O (HZO) thin films.
TEMAHf is moisture-sensitive; it should be stored in a sealed container under controlled conditions, avoiding exposure to moisture. Please refer to the SDS for detailed requirements regarding storage, handling, and safety.
TEMAHf contains ethylmethylamino ligands, whereas TDMAHf contains dimethylamino ligands. The differing ligand structures result in distinct volatility and deposition behaviors.
For product analysis reports (such as COA) or procurement consulting, please feel free to contact us at jomin@wolfachem.com at any time.
