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  • ALD/CVD Precursor
    • TDMAT丨CAS 3275-24-9
      TDMAT丨CAS 3275-24-9
      CAS: 3275-24-9
      Molecular Formula: C8H24N4Ti
      Abbreviation: TDMAT

      Tetrakis (dimethylamino) titanium (C8H24N4Ti) is a yellow to orange liquid with a strong ammoniacal odor and high reactivity. It is an important titanium precursor, commonly used in chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes to deposit high-purity titanium thin films or titanium dioxide layers. Due to its high volatility and good thermal stability, tetrakis (dimethylamino) titanium is widely used in the semiconductor, optoelectronics, and precision coating industries.
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    • CpHf丨CAS 941596-80-1
      CpHf丨CAS 941596-80-1
      CAS: 941596-80-1
      Chemical Formula: C11H23HfN3
      Abbreviation: CpHf

      Tris(dimethylamino)cyclopentadienyl hafnium (CpHf) is a high-performance, advanced organometallic precursor specifically designed for ALD and CVD processes. As a liquid at room temperature with excellent volatility, CpHf offers a broader thermal stability window and superior stability compared to traditional hafnium precursors. It can be used to deposit high-quality hafnium oxide and hafnium silicate high-k thin films.
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    • DIPAS丨CAS 908831-34-5
      DIPAS丨CAS 908831-34-5
      CAS: 908831-34-5
      Chemical Formula: C6H17NSi
      Abbreviation: DIPAS

      DIPAS is a liquid aminosilane precursor used for the low-temperature deposition of silicon-based dielectric thin films. Its vapor delivery characteristics and surface reactivity support thermal atomic layer deposition (Thermal ALD) and PEALD processes for depositing SiO₂ and SiNₓ, making it particularly suitable for applications requiring a reduced thermal budget and precise control over film growth.
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    • TDMAHf丨CAS 19782-68-4
      TDMAHf丨CAS 19782-68-4
      CAS: 19782-68-4
      Chemical Formula: C8H24HfN4
      Abbreviation: TDMAHf
       
      Tetrakis(Dimethylamino) Hafnium is a low-melting-point hafnium precursor suitable for controlled vapor-phase delivery in ALD/CVD processes. Its melting point range of 26–29°C allows for mild source heating, while the chemical characteristics of its alkylamido groups facilitate the deposition of HfO₂ (for high-k dielectric layers) and other hafnium-based thin films.
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    • Optoelectronic Materials
      • Organic Ligands
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        ABOUT US
        Fujian Wolfa Biotechnology Co., Ltd. is a global supplier of advanced organometallic precursors and high-purity specialty chemical materials, serving semiconductor, advanced manufacturing, and functional materials industries. We provide stable and scalable supply for high-performance applications.

        Leveraging proprietary synthesis, purification, and manufacturing capabilities, we integrate R&D, production, and controlled supply chain resources to deliver consistent, high-quality materials.
        OUR PARTNERS
        Wolfa has established long-term partnerships with leading companies in the semiconductor, advanced manufacturing, and high-end materials sectors. Leveraging our consistent quality, rapid response, and technological synergy, we continuously provide reliable support to our global customers.
         
        Our products have served customers in global innovation hubs such as the United States, Japan, South Korea, Switzerland, and India. Looking ahead, we will grow together with our partners, driving technological advancement with reliable materials and customized solutions.
        LATEST NEWS
        What Precursors Are Used in DRAM Manufacturing.png
        ALD/CVD Precursors

        What Precursors Are Used in DRAM Manufacturing?

        This guide explores the vital chemical precursors used in modern DRAM manufacturing, focusing on high-purity Zirconium (Zr), Hafnium (Hf), Titanium (Ti), and Silicon (Si). It explains how these metal-organic compounds are utilized in ALD and CVD processes to build ultra-thin high-k dielectric layers and electrodes for memory cells. Additionally, it outlines the strict technical criteria—such as optimal volatility, thermal stability, and ultra-high purity—that process engineers require to maximize chip yield at sub-7nm nodes.

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        How to Prevent Moisture Degradation When Handling Yttrium Precursors Like Y(MeCp)3.png
        ALD/CVD Precursors

        How to Prevent Moisture Degradation When Handling Yttrium Precursors Like Y(MeCp)3?

        Learn how to prevent moisture degradation when handling Y(MeCp)3. Discover expert tips on glovebox transfer, safe storage, and maintaining ALD precursor purity.

        / Read More
        Organic Chemicals in Electronic Materials.png
        Organic Chemicals

        Organic Chemicals in Electronic Materials: From Photoresists to ALD/CVD Ligands

        Discover the role of electronic grade organic chemicals. Wolfa provides high-purity custom organic ligands for ALD/CVD precursors. 

        / Read More
        Contact Our Technical Team
        We’d love to hear from you.  Whether you have questions about our products, need technical support, or want to explore new opportunities, our team is here to assist you. Reach out to us today, and we’ll provide the expert guidance and tailored solutions you need. 
         
        We typically respond within 24 hours.
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        Address: 3901 Sansheng Tuscany, Nanyu Town, Minhou County, Fuzhou City, Fujian Province

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