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Synonyms | TDMAH;TDMAHf;Tetrakis(dimethylamino)hafnium(IV) 99.9999%;Tetrakis(dimethylamino)hafnium(IV); Hafnium dimethylamide |
Appearance | Colorless to pale yellow solid |
Molecular Weight | 354.796 g/mol |
Melting Point | 26-29 ℃(lit.) |
Boiling Point | 85 ℃/0.1mm |
Density | 1.098 g/mL at 25 ℃ |
Solubility | Soluble in most organic solvents, such as hexane, toluene, etc. |
Sensitivity | Air/moisture sensitive |
Purity | 99%，Hf-99.9999% |
Analytical Methods | ICP-MS /ICP-OES /relevant assay method |
Package Information | 100g, 500g, 1kg, or customized |
TDMAHf has a melting point of only 26–29°C, allowing it to be maintained in a liquid state with only mild heating of the source. This offers a practical method for the controlled delivery of the precursor without the need for high temperatures.
Its dimethylamino ligands react rapidly with surface hydroxyl groups and oxidizing co-reactants such as H₂O, enabling the layer-by-layer growth of HfO₂ via atomic layer deposition (ALD). The combination of vapor-phase delivery and high surface reactivity makes TDMAHf particularly suitable for processes requiring precise control over Hf-based dielectric films.
TDMAHf is used as a hafnium source for HfO₂ atomic layer deposition (ALD), typically in conjunction with H₂O or O₃ as the oxygen source. HfO₂ thin films deposited using TDMAHf can be applied in:
High-k gate dielectrics
DRAM capacitor dielectrics
MIM dielectric structures
Hafnium-based dielectric stacks
In addition to its use in the preparation of HfO₂, TDMAHf can serve as a hafnium source for the fabrication of other hafnium-containing thin films and mixed-metal dielectric systems. The composition and deposition behavior of the films depend on the co-reactants, substrate, and process conditions.
TDMAHf transitions from a low-melting-point solid to a liquid near room temperature, allowing the precursor source to be maintained above its melting point during delivery. The vapor pressure relationship is:
log[p (Torr)] = 9.99 − 3377 / T(K)
The source temperature should be selected based on the required vapor pressure, the precursor container, and the configuration of the deposition system.
TDMAHf is processed under controlled conditions to minimize exposure to air and moisture. Available packaging options include:
Sealed bottles or ampoules
Stainless steel precursor containers
ALD/CVD bubblers
Customized container and valve configurations
Packaging specifications and fill volumes can be tailored to laboratory, pilot, or production-scale deposition systems.
TDMAHf is a low-melting-point solid with a melting point of 26–29°C; therefore, it requires only mild heating to maintain a liquid state during precursor delivery.
In addition to chemical purity, trace metals, moisture, and zirconium content are also important quality indicators for semiconductor applications.
Yes. TDMAHf can be filled into compatible stainless steel precursor containers, bubblers, or other custom delivery vessels according to customer requirements.
H₂O and O₃ are commonly used oxygen sources for depositing HfO₂. The choice of co-reactant depends on the properties of the target film and the reactor configuration.
For product analysis reports (such as COA) or procurement consulting, please feel free to contact us at jomin@wolfachem.com at any time.
