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Synonyms | CpHf;CpTDMAH;Cyclopentadienyl tris(dimethylamino)hafnium(IV) |
Molecular Formula | C11H23HfN3 |
Appearance | Colorless to light-yellow liquid |
Molecular Weight | 375.81 g/mol |
Sensitivity | Highly moisture and air-sensitive |
Application | ALD / PEALD of Hf-containing thin films |
Purity | 99%，Hf-99.9999% |
Analytical Methods | ICP-MS / ICP-OES / relevant assay method |
Package Information | 100g, 500g, 1kg, or customized |
Optimal Volatility: Liquid-phase properties with suitable vapor pressure ensure stable and continuous precursor delivery to the deposition chamber.
Wide ALD Thermal Window: Exhibits excellent thermal stability, preventing premature gas-phase decomposition and ensuring the self-limiting growth mode of the ALD process.
Ultra-high Purity: Trace metal impurities are strictly controlled at ppm/ppb levels, meeting the rigorous requirements of advanced logic and memory process nodes.
Superior Film Quality: Enables the deposition of highly dense, carbon-free HfO2 films characterized by extremely low leakage current and excellent electrical performance.
High-k gate dielectrics: CpHf can be used for the deposition of HfO2 gate oxide layers in advanced CMOS, FinFET, and Gate-All-Around (GAA) transistor architectures.
Memory devices: Used to fabricate high-k capacitor dielectrics in DRAM and blocking layers in 3D NAND flash memory.
Advanced thin films: CpHf serves as a precursor for synthesizing hafnium nitride (HfN) blocking layers and other complex hafnium-based metal oxides.
CpHf is sensitive to air and moisture and should be packaged and transported under controlled conditions.
R&D scale: 10g, 50g, and 100g; packaged in sealed glass ampoules or small-capacity bubblers.
Mass production: High-purity stainless steel bubblers (cylinders) in sizes of 150ml, 300ml, 1.2L, and larger, equipped with standard VCR fittings and precision valves.
Custom cylinder design and modification services are available upon request.
1. What does Tris(Dimethylamino)Cyclopentadienyl Hafnium do?
It is a mainstream hafnium metal-organic precursor in the semiconductor industry, used for ALD/CVD deposition of high dielectric constant HfO2 thin films.
2. What reaction sources are typically used in conjunction with CpHf when depositing hafnium oxide thin films?
The most commonly used co-reaction sources are water, ozone, and oxygen plasma. The reaction with water is relatively mild and easy to control; the reaction with ozone can yield high-quality films at lower temperatures, but ozone is a strong oxidizing agent; oxygen plasma can achieve lower deposition temperatures and improve film density. The choice depends on the specific equipment capabilities and process objectives.
3. What are the advantages of CpHf compared to other Hf precursors?
CpHf has a more moderate evaporation temperature range, high film purity, and low residual carbon content, making it suitable for advanced node processes.
4. How are the products packaged?
Generally, custom-made metal containers or gas phase delivery bottles are used, and inert gas is used for sealing to ensure stability during transportation and storage.
Wolfa professionally supplies CpHf, supporting small-batch sampling and large-volume procurement needs. Packaging options include ordinary glass bottles, glass ampoules, metal ampoules, etc.
For product analysis reports (such as COA) or procurement consulting, please feel free to contact us at jomin@wolfachem.com at any time.
