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| Synonyms | HAFNIUM DIETHYLAMIDE;TETRAKIS(DIETHYLAMINO)HAFNIUM, 99.99%;tetrakis (diethylamido)hafnium(iv); Hafnium, Tetrakis(diethylamino);Tetrakis (diethylamino)hafnium 99.999% |
| Molecular Formula | TDEAHf |
| Appearance | Pale yellow liquid |
| Molecular Weight | 467.01 |
| Melting Point | -68 ℃ |
| Boiling Point | 130 ℃ 0.01 mm Hg(lit.) |
| Density | 1.249 g/mL at 25 °C(lit.) |
| Flash Point | 50 °F |
| Sensibility | Moisture sensitive |
| Purity | 99%，Hf-99.9999% |
| Package Information | 100g, 500g, 1kg, or customized |
TDEAHf is used as a hafnium source for HfO₂ and hafnium-containing thin-film deposition processes.
Its liquid form supports bubbler, ampoule or cylinder-based vapor delivery when temperature and moisture are well controlled.
Compared with HfCl₄, TDEAHf avoids chloride-derived corrosion and chlorine contamination concerns in sensitive deposition processes.
Hafnium diethylamide reacts readily with oxidants such as water or ozone, enabling ligand-exchange chemistry in ALD process development.
Tetrakis(diethylamino)hafnium is used with oxidants such as water vapor to deposit hafnium oxide films by atomic layer deposition.
TDEAHf-derived HfO₂ is relevant to high-k dielectric layers, gate oxide development and advanced semiconductor device structures.
The precursor can be evaluated in chemical vapor deposition systems for HfO₂ or hafnium-containing oxide films.
TDEAHf may be used in co-deposition or nanolaminate processes for hafnium silicate and other hafnium-based dielectric materials.
TDEAHf is water-reactive and may release flammable gas when exposed to moisture. Handle and store under dry nitrogen or argon to prevent hydrolysis and precursor degradation.
Bubblers, cylinders, valves and transfer lines must be dry before charging or vapor delivery.
Keep away from heat, sparks, open flames and hot surfaces because the liquid is flammable.
Repeated container opening may introduce oxygen and moisture, affecting vapor delivery and film quality.
Handle in a fume hood, glovebox or closed delivery system to reduce vapor exposure.
Dispose of residues as water-reactive organometallic hazardous waste according to local regulations.
1. What is TDEAHf used for?
TDEAHf is mainly used for depositing hafnium oxide and hafnium-containing dielectric films in ALD, CVD and microelectronics research.
2. Can TDEAHf be used for HfO₂ ALD?
Yes. Tetrakis(diethylamino)hafnium has been reported as a hafnium precursor for ALD of HfO₂ films using oxidants such as water vapor.
3. What oxidants are used with TDEAHf?
Water vapor and ozone are common oxidants in hafnium oxide ALD chemistry. The best oxidant depends on substrate, temperature window and film requirements.
4. How should Tetrakis(diethylamino)hafnium be stored?
Store it tightly sealed under dry nitrogen or argon in a cool, dry and ventilated place. Avoid water, air, heat and ignition sources.
5. Why is zirconium impurity important in hafnium precursors?
Hafnium and zirconium are chemically similar, and zirconium impurity may affect dielectric material composition, device evaluation and process consistency.
6. What packaging is recommended for TDEAHf?
Glass ampoules, sealed bottles, metal ampoules or bubblers can be used. Packaging should match vapor delivery method, quantity and moisture-control requirements.
Wolfa professionally supplies this product, supporting small-batch sampling and large-volume procurement needs. Packaging options include ordinary glass bottles, glass ampoules, metal ampoules, etc.
For product analysis reports (such as COA) or procurement consulting, please feel free to contact us at jomin@wolfachem.com at any time.
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