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Synonyms | DIPAS;Di-iso-propylaminosilane;Silanamine, N,N-bis(1-methylethyl)-;Diisopropylaminosilane(DIPAS);N,N-Diisopropylaminosilane |
Appearance | Colorless liquid |
Molecular Weight | 131.29 g/mol |
Molecular Formula | C6H17NSi |
Boiling Point | 140.7±23.0 ℃(Predicted) |
Acidity Coefficient (pKa) | 8.05±0.70(Predicted) |
Purity | 99%，Si-99.9999% |
Analytical Methods | ICP-MS /ICP-OES /relevant assay method |
Package Information | 100g, 500g, 1kg, or customized |
Main Application | Si precursor for ALD / CVD |
DIPAS remains liquid well below room temperature and provides sufficient vapor pressure for direct precursor delivery. This allows controlled dosing without the melting step required for solid precursors.
The combination of an Si–H₃ group with a single diisopropylamino ligand imparts excellent surface reactivity to DIPAS, making it suitable for low-temperature ALD. When used with appropriate oxidants or plasma co-reactants, it enables the deposition of silicon oxide and silicon nitride thin films while maintaining low process temperatures.
As a halogen-free silicon precursor, DIPAS also avoids the direct introduction of chlorine or other halogens from the precursor molecule itself.
DIPAS can be used in combination with O₃ for the thermal ALD of SiO₂. Research indicates that this process enables self-limiting SiO₂ growth at temperatures as low as 100°C, making DIPAS particularly advantageous for applications with strict thermal budget constraints.
DIPAS is also compatible with O₂ plasma for PEALD processes. Reported deposition temperatures can be as low as 50°C, offering an alternative pathway for low-temperature SiO₂ thin-film growth.
Potential applications include:
Dielectric and insulating layers
Gate dielectric films
Interfacial oxide layers
Spacer and liner structures
Other conformal SiO₂ films
DIPAS has also been investigated as a silicon source for SiNₓ PEALD (plasma-enhanced atomic layer deposition) using N₂ plasma. This process offers a method for producing silicon nitride thin films at lower deposition temperatures, making it suitable for applications such as dielectric layers, buffer layers, and etch-stop layers.
DIPAS exhibits different adsorption behaviors on oxide and nitride surfaces. It demonstrates inherent selectivity for SiO₂ deposition on specific surfaces (such as SiO₂ over SiN), highlighting its potential for area-selective ALD and bottom-up patterning processes.
By controlling surface growth inhibition effects, SiO₂ growth can be directed to initiate preferentially from the bottom of recessed structures, thereby reducing seam formation during the filling process.
DIPAS is filled and processed under controlled conditions to ensure product quality during storage and transport. Available packaging options include:
Stainless steel precursor cylinders
ALD/CVD bubblers
Customized valve and connection configurations
Container configurations are compatible with laboratory, pilot-scale, or production-scale deposition systems.
Each batch of product undergoes testing against established specifications prior to release.
Chemical Purity: Gas Chromatography (GC) is used to analyze DIPAS purity and related organic impurities.
Trace Metals: ICP-MS/ICP-OES is used to analyze key metallic impurities.
Moisture Control: Moisture content is monitored in accordance with product grade requirements.
Identification: Nuclear Magnetic Resonance (NMR) and other analytical methods are used to verify product identity.
Documentation: COA, SDS, and TDS are available. Batch-specific analytical data can be provided upon request.
Yes. The DIPAS/O₃ thermal ALD process has been demonstrated at 100°C, while research on the DIPAS/O₂ plasma-enhanced ALD (PEALD) process has been conducted at temperatures as low as 50°C.
DIPAS contains one diisopropylamino ligand and three Si–H bonds, whereas BDEAS contains two diethylamino ligands and two Si–H bonds. Differences in ligand structure result in variations regarding volatility, steric environments, and surface reaction behavior during the deposition process.
The deposition temperature influences both surface reaction kinetics and film composition. At very low temperatures, incomplete reactions may result in a higher concentration of hydroxyl-related species remaining in the film, whereas increasing the temperature generally facilitates the formation of a more complete Si–O network structure.
Yes. DIPAS enables SiO₂ growth at relatively low substrate temperatures; this characteristic is particularly useful when the underlying materials or device structures have limited thermal tolerance (thermal budget).
For product analysis reports (such as COA) or procurement consulting, please feel free to contact us at jomin@wolfachem.com at any time.
