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SEMICONDUCTOR MANUFACTURING
Advanced Logic &
Memory Fabrication
Our ALD/CVD precursors are engineered for advanced logic and memory manufacturing, where purity, volatility, and process compatibility are critical. From high-k dielectrics to metal-containing thin films and barrier layers, we supply the chemical building blocks required for next-generation semiconductor fabrication.
In advanced device architectures, thin-film quality and interface control play a central role in overall device performance. Materials used in high-k stacks, metal gate formation, and barrier or liner layers must exhibit low impurity levels and stable delivery behavior to support consistent deposition. These requirements become even more critical in applications such as DRAM capacitors, 3D NAND structures, and gate-all-around (GAA) transistors, where scaling and structural complexity place tighter constraints on precursor performance.
HIGH-K DIELECTRICS丨METAL GATE丨BARRIER LAYERS丨DRAM CAPACITORS丨3D NAND丨EUV PATTERNING丨GAA TRANSISTORS
① Hafnium(Hf): High-k dielectric
HfO₂ replaced SiO₂ as the standard gate dielectric from 45 nm node onward. Its high dielectric constant(~25) enables thinner equivalent oxide thickness(EOT) while suppressing leakage current. Also ferroelectric in doped form(HZO), enabling embedded FeRAM.
All applications: HfO₂ Gate in FinFET/ GAA丨 DRAM capacitor dielectric丨HKMG stacks(HfO₂, HfSiO) ② Zirconium(Zr): High-k dielectric
ZrO₂ offers a dielectric constant of ~25 and excellent thermal stability. In DRAM, Zr-based films achieve high capacitance in tight 3D structures. Mixed with Hf in HZO stacks, it enables ferroelectronic switching for next-gen memory.
All applications: ZrO₂ in DRAM capacitors丨HZO ferroelectronic layers丨Alternative gate dielectric ③ Titanium(Ti): Barrier /adhesion
TiN is one of the most widely used thin film in semiconductor devices - it acts as a diffusion barrier between tungsten or copper and the underlying dielectric, and also serves as a metal gate electrode in HKMG processes due to its tunable work function.
All applications: TiN barrier layer丨Metal gate electrode丨Contact silicide(TiSi₂)丨Adhesion layer for Cu interconnects
④ Tantalum(Ta): Diffusion barrier
Ta/TaN bilayers are deposited by ALD as the Cu diffusion barrier in back-end-of-line (BEOL) interconnects. As nodes shrink below 10 nm, TaN barrier thickness must be minimized to maintain low resistance - ALD's atomic-level control is critical here.
All applications: TaN/Ta Cu diffusion barrier丨Capacitor electrode in DRAM丨Low-resistance liner in backend ⑤ Tungsten(W): Contact fill/gate
Tungsten is the dominant material for contact plug fill due to its high melting point and compatibility with fluorine-based chemistries. In 3D NAND, thin W layers form the word lines between oxide/nitride stacks, requiring excellent step coverage.
All applications: Contact plug fill (W-CVD)丨Word line in 3D NAND丨Metal gate work-function tuning
⑥ Aluminum(AI): Gate/dielectric dopant
Al₂O₃ is used as a capping or interfacial layer within high-k stacks to shift threshold voltage and improve reliability. Al also diffuses into HfO₂ to tune the flat-band voltage in p-MOS gates, allowing independent optimization of n-and p-channel devices.
All applications: Al₂O₃ in gate dielectric stacks丨Work-function tuning in HKMG丨Al cap layer in Cu interconnects ⑦ Ruthenium(RU): Electrode/liner
Ru is a rising star at advanced nodes. Its low resistivity and excellent nucleation behavior make it a leading candidate to replace TaN/Ta barriers for Cu at 5nm and below. Ru electrodes also enable high-aspect-ratio DRAM capacitors due to their conformalALD growth.
All applications: DRAM capacitor bottom electrode丨Cu-liner replacement at ≤7 nm丨Magnetic tunnel junction stacks(MRAM)
⑧ Molybdenum(Mo): Metal gate electrode
Mo has emerged as a promising metal gate candidate for gate-all-around (GAA) transistors at 2 nm and below. Its work function is well-matched to n-MOS, and it provides lower resistivity than W in narrow gate structures, reducing RC delay in scaled devices.
All applications: n-MOS gate electrode(GAA)丨Low-resistance word lines丨Replacement metal gate(RMG) at 2nm ⑨ Cobalt(Co): Contact liner
Co replaced Ti/TiN as the silicide-forming metal at 14 nm and below. At tight pitches, Co-fill contacts outperform W due to lower nucleation resistivity and smoother interfaces. It is also evaluated as a W replacement for local interconnect layers.
All applications: Self-aligned silicide(CoSi₂)丨Local interconnect fill(<14 nm)丨Replacement for W contacts View Precursor Portfolio →
